Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing
Ti Ohmic contacts to relatively highly doped (1 × 1018 cm−3) n-type 4H-SiC have been produced, without high temperature annealing, by means of low temperature electronic cyclotron resonance microwave hydrogen plasma pre-treatment (HPT) of the SiC surface. The as-deposited Ti/4H-SiC contacts show Ohm...
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Veröffentlicht in: | Applied physics letters 2012-06, Vol.100 (26) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ti Ohmic contacts to relatively highly doped (1 × 1018 cm−3) n-type 4H-SiC have been produced, without high temperature annealing, by means of low temperature electronic cyclotron resonance microwave hydrogen plasma pre-treatment (HPT) of the SiC surface. The as-deposited Ti/4H-SiC contacts show Ohmic properties, and the specific contact resistance obtained is as low as 2.07 × 10−4 Ω·cm2 after annealing at low temperatures (400 °C). This is achieved by low barrier height at Ti/SiC interface, which could be attributed to decrease of surface states density by the HPT releasing Fermi level pinning, and to band-gap narrowing, image-force, and thermionic-field emission at high doping. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4730435 |