Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers

Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical c...

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Hauptverfasser:	Baryshnikov, F. M., Britvich, G. I., Chernykh, A. V., Chernykh, S. V., Chubenko, A. P., Didenko, S. I., Koltsov, G. I., Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino, National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow, P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	AMERICIUM 241 FAST NEUTRONS GALLIUM ARSENIDES INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ION IMPLANTATION LAYERS NEUTRON DETECTION NEUTRON DETECTORS PROTONS SEMICONDUCTOR DETECTORS SEMICONDUCTOR MATERIALS
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Zusammenfassung:	Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of {sup 241}Am-Be source by the recoil protons method are discussed.
ISSN:	0094-243X 1551-7616
DOI:	10.1063/1.4766487