Optical properties of bismuth-doped silica fibres in the temperature range 300 — 1500 K
The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the german...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2012-09, Vol.42 (9), p.762-769 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi{sup 3+} profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect. (optical fibres, lasers and amplifiers. properties and applications) |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QE2012v042n09ABEH014894 |