Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure

Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions. It is shown that, in the temperature range 400 to ∼100 K, electron mobility increases in accordance with the mechanism of electron scattering at an acoustic phonon, while, with a subsequent decrease in temperature to the temperature of liquid helium, mobility drops because the Coulomb scattering of electrons at charged surface centers starts to dominate. It is demonstrated that as a result of γ-ray irradiation, electron mobility decreases and the degree of this decrease strongly depends on the electrical mode of the sensor during irradiation.