Formation and annealing of radiation defects in tin-doped p-type germanium crystals
The effect of tin on the formation and annealing of radiation defects in p -type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn V with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2012-05, Vol.46 (5), p.611-614 |
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| container_issue | 5 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 46 |
| creator | Litvinov, V. V. Petukh, A. N. Pokotilo, Ju. M. Markevich, V. P. Lastovskii, S. B. |
| description | The effect of tin on the formation and annealing of radiation defects in
p
-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn
V
with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75°C. Annealing of irradiated crystals at temperatures in the range 110–150°C brings about the formation of deep-level centers with a donor level at
E
v
+ 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom. |
| doi_str_mv | 10.1134/S1063782612050156 |
| format | Article |
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p
-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn
V
with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75°C. Annealing of irradiated crystals at temperatures in the range 110–150°C brings about the formation of deep-level centers with a donor level at
E
v
+ 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782612050156</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ANNEALING ; ATOMS ; COMPLEXES ; CRYSTALS ; DEFECTS ; DOPED MATERIALS ; Electronic Properties of Semiconductors ; ENTHALPY ; GALLIUM ; GERMANIUM ; Ionization ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Nuclear radiation ; Physics ; Physics and Astronomy ; TIN ; Toy industry</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.611-614</ispartof><rights>Pleiades Publishing, Ltd. 2012</rights><rights>COPYRIGHT 2012 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-55a3ffae6ec6a237105cd646d2ca420020736c96b134facfb8e33469aae738883</citedby><cites>FETCH-LOGICAL-c355t-55a3ffae6ec6a237105cd646d2ca420020736c96b134facfb8e33469aae738883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782612050156$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782612050156$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22038984$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Litvinov, V. V.</creatorcontrib><creatorcontrib>Petukh, A. N.</creatorcontrib><creatorcontrib>Pokotilo, Ju. M.</creatorcontrib><creatorcontrib>Markevich, V. P.</creatorcontrib><creatorcontrib>Lastovskii, S. B.</creatorcontrib><title>Formation and annealing of radiation defects in tin-doped p-type germanium crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The effect of tin on the formation and annealing of radiation defects in
p
-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn
V
with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75°C. Annealing of irradiated crystals at temperatures in the range 110–150°C brings about the formation of deep-level centers with a donor level at
E
v
+ 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.</description><subject>ANNEALING</subject><subject>ATOMS</subject><subject>COMPLEXES</subject><subject>CRYSTALS</subject><subject>DEFECTS</subject><subject>DOPED MATERIALS</subject><subject>Electronic Properties of Semiconductors</subject><subject>ENTHALPY</subject><subject>GALLIUM</subject><subject>GERMANIUM</subject><subject>Ionization</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Nuclear radiation</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>TIN</subject><subject>Toy industry</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKs_wF3A9dQ8JpnMshSrQsFFdR3SPGpKJxmSdNF_b8q4E-RyuSH3fBfOAeARowXGtH3eYsRpJwjHBDGEGb8CM4x61PC2668vb06by_4W3OV8QAhjwdoZ2K5jGlTxMUAVTO1g1dGHPYwOJmX8tDLWWV0y9AEWHxoTR2vg2JTzaOHe1gPBnwao0zkXdcz34MbVYR9-5xx8rV8-V2_N5uP1fbXcNJoyVhrGFHVOWW41V4R2GDFteMsN0aolCBHUUa57vqv-nNJuJyylLe-Vsh0VQtA5eJruxly8zNoXq791rBZ0kYQgKnrRVtViUu3V0UofXCxJ6VrGDr6qrfP1f0k5pgwT3lUAT4BOMedknRyTH1Q6S4zkJWz5J-zKkInJVRtqJPIQTylU9_9AP0zqgDk</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Litvinov, V. V.</creator><creator>Petukh, A. N.</creator><creator>Pokotilo, Ju. M.</creator><creator>Markevich, V. P.</creator><creator>Lastovskii, S. B.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20120501</creationdate><title>Formation and annealing of radiation defects in tin-doped p-type germanium crystals</title><author>Litvinov, V. V. ; Petukh, A. N. ; Pokotilo, Ju. M. ; Markevich, V. P. ; Lastovskii, S. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-55a3ffae6ec6a237105cd646d2ca420020736c96b134facfb8e33469aae738883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ANNEALING</topic><topic>ATOMS</topic><topic>COMPLEXES</topic><topic>CRYSTALS</topic><topic>DEFECTS</topic><topic>DOPED MATERIALS</topic><topic>Electronic Properties of Semiconductors</topic><topic>ENTHALPY</topic><topic>GALLIUM</topic><topic>GERMANIUM</topic><topic>Ionization</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Nuclear radiation</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>TIN</topic><topic>Toy industry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Litvinov, V. V.</creatorcontrib><creatorcontrib>Petukh, A. N.</creatorcontrib><creatorcontrib>Pokotilo, Ju. M.</creatorcontrib><creatorcontrib>Markevich, V. P.</creatorcontrib><creatorcontrib>Lastovskii, S. B.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Litvinov, V. V.</au><au>Petukh, A. N.</au><au>Pokotilo, Ju. M.</au><au>Markevich, V. P.</au><au>Lastovskii, S. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation and annealing of radiation defects in tin-doped p-type germanium crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2012-05-01</date><risdate>2012</risdate><volume>46</volume><issue>5</issue><spage>611</spage><epage>614</epage><pages>611-614</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The effect of tin on the formation and annealing of radiation defects in
p
-type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn
V
with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75°C. Annealing of irradiated crystals at temperatures in the range 110–150°C brings about the formation of deep-level centers with a donor level at
E
v
+ 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782612050156</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.611-614 |
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| language | eng |
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| subjects | ANNEALING ATOMS COMPLEXES CRYSTALS DEFECTS DOPED MATERIALS Electronic Properties of Semiconductors ENTHALPY GALLIUM GERMANIUM Ionization Magnetic Materials Magnetism MATERIALS SCIENCE Nuclear radiation Physics Physics and Astronomy TIN Toy industry |
| title | Formation and annealing of radiation defects in tin-doped p-type germanium crystals |
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