Formation and annealing of radiation defects in tin-doped p-type germanium crystals

Formation and annealing of radiation defects in tin-doped p-type germanium crystals

The effect of tin on the formation and annealing of radiation defects in p -type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn V with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-05, Vol.46 (5), p.611-614
Hauptverfasser: Litvinov, V. V., Petukh, A. N., Pokotilo, Ju. M., Markevich, V. P., Lastovskii, S. B.
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
ATOMS
COMPLEXES
CRYSTALS
DEFECTS
DOPED MATERIALS
Electronic Properties of Semiconductors
ENTHALPY
GALLIUM
GERMANIUM
Ionization
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Nuclear radiation
Physics
Physics and Astronomy
TIN
Toy industry
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Zusammenfassung:The effect of tin on the formation and annealing of radiation defects in p -type germanium crystals irradiated with 6-MeV electrons at a temperature of 80 K is studied. It is shown that acceptor complexes Sn V with a hole ionization enthalpy of 0.16 eV are dominant in irradiated Ge:(Sn, Ga) crystals after their heating to a temperature of 300 K. These complexes disappeared as a result of the annealing of irradiated crystals in the temperature range 30–75°C. Annealing of irradiated crystals at temperatures in the range 110–150°C brings about the formation of deep-level centers with a donor level at E v + 0.29 eV; this center is presumably related to a complex consisting of a tin atom and an interstitial gallium atom.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612050156