Exciton confinement in homo- and heteroepitaxial ZnO/Zn{sub 1-x}Mg{sub x}O quantum wells with x < 0.1

ZnO/Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures with well widths d{sub W} between 1.1 nm and 10.4 nm were grown by plasma-assisted molecular beam epitaxy both heteroepitaxially on c-plane sapphire and homoepitaxially on (0001)-oriented bulk ZnO. A significantly reduced Mg incorporation in the top barrier related to the generation of stacking faults is observed for heteroepitaxial samples. Exciton localization is observed for both types of samples, while an enhancement of the exciton binding energy compared to bulk ZnO is only found for homoepitaxial SQWs for 2 nm {