Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering

Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values betwe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2012-04, Vol.111 (7)
Hauptverfasser: Hassen, E. M. J., SPINTEC, Viala, B., Cyrille, M. C., Cartier, M., Redon, O., Lima, P., Belhadji, B., Yang, H. X., Chshiev, M., Velev, J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 7
container_start_page
container_title Journal of applied physics
container_volume 111
creator Hassen, E. M. J.
SPINTEC
Viala, B.
Cyrille, M. C.
Cartier, M.
Redon, O.
Lima, P.
Belhadji, B.
Yang, H. X.
Chshiev, M.
Velev, J.
description Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.
doi_str_mv 10.1063/1.3688913
format Article
fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22036856</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22036856</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_220368563</originalsourceid><addsrcrecordid>eNqNj81KAzEUhYMoOP4sfIMLrqeTTJhpsrVY3Am1-5JJrzWlkwy5N4sivruD9AFcHfj4zoEjxJOSCyV73aiF7o2xSl-JSklj62XXyWtRSdmq2tilvRV3REcplTLaVuK8SWkExnHC7LhkhNEdInLKSIHYRY8QIqzSGl-aj7wN799UBtA_zR-62MEDlxjxBMcSPYcUCfY4JQqMexjOMBMY0I1AU2HGHOLhQdx8uhPh4yXvxfP6dbt6qxNx2JGfq_7Lp3nV865t5fyr6_X_rF_V-1O2</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Hassen, E. M. J. ; SPINTEC ; Viala, B. ; Cyrille, M. C. ; Cartier, M. ; Redon, O. ; Lima, P. ; Belhadji, B. ; Yang, H. X. ; Chshiev, M. ; Velev, J.</creator><creatorcontrib>Hassen, E. M. J. ; SPINTEC ; Viala, B. ; Cyrille, M. C. ; Cartier, M. ; Redon, O. ; Lima, P. ; Belhadji, B. ; Yang, H. X. ; Chshiev, M. ; Velev, J.</creatorcontrib><description>Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3688913</identifier><language>eng</language><publisher>United States</publisher><subject>COBALT COMPOUNDS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COUPLING ; DEPOSITION ; ENERGY BEAM DEPOSITION ; FERROMAGNETIC MATERIALS ; ION BEAMS ; IRON COMPOUNDS ; MAGNETORESISTANCE ; MATERIALS SCIENCE ; OXIDATION ; POLYCRYSTALS ; SPUTTERING ; STRONTIUM TITANATES ; SUPERCONDUCTING JUNCTIONS ; TEMPERATURE RANGE 0273-0400 K ; TUNNEL EFFECT</subject><ispartof>Journal of applied physics, 2012-04, Vol.111 (7)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22036856$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hassen, E. M. J.</creatorcontrib><creatorcontrib>SPINTEC</creatorcontrib><creatorcontrib>Viala, B.</creatorcontrib><creatorcontrib>Cyrille, M. C.</creatorcontrib><creatorcontrib>Cartier, M.</creatorcontrib><creatorcontrib>Redon, O.</creatorcontrib><creatorcontrib>Lima, P.</creatorcontrib><creatorcontrib>Belhadji, B.</creatorcontrib><creatorcontrib>Yang, H. X.</creatorcontrib><creatorcontrib>Chshiev, M.</creatorcontrib><creatorcontrib>Velev, J.</creatorcontrib><title>Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering</title><title>Journal of applied physics</title><description>Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.</description><subject>COBALT COMPOUNDS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COUPLING</subject><subject>DEPOSITION</subject><subject>ENERGY BEAM DEPOSITION</subject><subject>FERROMAGNETIC MATERIALS</subject><subject>ION BEAMS</subject><subject>IRON COMPOUNDS</subject><subject>MAGNETORESISTANCE</subject><subject>MATERIALS SCIENCE</subject><subject>OXIDATION</subject><subject>POLYCRYSTALS</subject><subject>SPUTTERING</subject><subject>STRONTIUM TITANATES</subject><subject>SUPERCONDUCTING JUNCTIONS</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>TUNNEL EFFECT</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNj81KAzEUhYMoOP4sfIMLrqeTTJhpsrVY3Am1-5JJrzWlkwy5N4sivruD9AFcHfj4zoEjxJOSCyV73aiF7o2xSl-JSklj62XXyWtRSdmq2tilvRV3REcplTLaVuK8SWkExnHC7LhkhNEdInLKSIHYRY8QIqzSGl-aj7wN799UBtA_zR-62MEDlxjxBMcSPYcUCfY4JQqMexjOMBMY0I1AU2HGHOLhQdx8uhPh4yXvxfP6dbt6qxNx2JGfq_7Lp3nV865t5fyr6_X_rF_V-1O2</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Hassen, E. M. J.</creator><creator>SPINTEC</creator><creator>Viala, B.</creator><creator>Cyrille, M. C.</creator><creator>Cartier, M.</creator><creator>Redon, O.</creator><creator>Lima, P.</creator><creator>Belhadji, B.</creator><creator>Yang, H. X.</creator><creator>Chshiev, M.</creator><creator>Velev, J.</creator><scope>OTOTI</scope></search><sort><creationdate>20120401</creationdate><title>Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering</title><author>Hassen, E. M. J. ; SPINTEC ; Viala, B. ; Cyrille, M. C. ; Cartier, M. ; Redon, O. ; Lima, P. ; Belhadji, B. ; Yang, H. X. ; Chshiev, M. ; Velev, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_220368563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>COBALT COMPOUNDS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>COUPLING</topic><topic>DEPOSITION</topic><topic>ENERGY BEAM DEPOSITION</topic><topic>FERROMAGNETIC MATERIALS</topic><topic>ION BEAMS</topic><topic>IRON COMPOUNDS</topic><topic>MAGNETORESISTANCE</topic><topic>MATERIALS SCIENCE</topic><topic>OXIDATION</topic><topic>POLYCRYSTALS</topic><topic>SPUTTERING</topic><topic>STRONTIUM TITANATES</topic><topic>SUPERCONDUCTING JUNCTIONS</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>TUNNEL EFFECT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hassen, E. M. J.</creatorcontrib><creatorcontrib>SPINTEC</creatorcontrib><creatorcontrib>Viala, B.</creatorcontrib><creatorcontrib>Cyrille, M. C.</creatorcontrib><creatorcontrib>Cartier, M.</creatorcontrib><creatorcontrib>Redon, O.</creatorcontrib><creatorcontrib>Lima, P.</creatorcontrib><creatorcontrib>Belhadji, B.</creatorcontrib><creatorcontrib>Yang, H. X.</creatorcontrib><creatorcontrib>Chshiev, M.</creatorcontrib><creatorcontrib>Velev, J.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hassen, E. M. J.</au><au>SPINTEC</au><au>Viala, B.</au><au>Cyrille, M. C.</au><au>Cartier, M.</au><au>Redon, O.</au><au>Lima, P.</au><au>Belhadji, B.</au><au>Yang, H. X.</au><au>Chshiev, M.</au><au>Velev, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering</atitle><jtitle>Journal of applied physics</jtitle><date>2012-04-01</date><risdate>2012</risdate><volume>111</volume><issue>7</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.</abstract><cop>United States</cop><doi>10.1063/1.3688913</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2012-04, Vol.111 (7)
issn 0021-8979
1089-7550
language eng
recordid cdi_osti_scitechconnect_22036856
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects COBALT COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
DEPOSITION
ENERGY BEAM DEPOSITION
FERROMAGNETIC MATERIALS
ION BEAMS
IRON COMPOUNDS
MAGNETORESISTANCE
MATERIALS SCIENCE
OXIDATION
POLYCRYSTALS
SPUTTERING
STRONTIUM TITANATES
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
title Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T13%3A03%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room%20temperature%20magnetoresistance%20in%20CoFeB/SrTiO%7Bsub%203%7D/CoFeB%20magnetic%20tunnel%20junctions%20deposited%20by%20ion%20beam%20sputtering&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Hassen,%20E.%20M.%20J.&rft.date=2012-04-01&rft.volume=111&rft.issue=7&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.3688913&rft_dat=%3Costi%3E22036856%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true