Room temperature magnetoresistance in CoFeB/SrTiO{sub 3}/CoFeB magnetic tunnel junctions deposited by ion beam sputtering

Room temperature transport properties are reported in polycrystalline SrTiO{sub 3}-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO{sub 3} barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 {Omega}.{mu}m{sup 2} and 22 k{Omega}.{mu}m{sup 2} have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13% at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness.