Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa{sub 2}Se{sub 4}
The results of investigation of the temperature dependence of CdGa{sub 2}Se{sub 4} absorption coefficient in the polarized radiation at 5-300 K and that of the emission intensity at 4.2-77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiati...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-03, Vol.45 (3) |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The results of investigation of the temperature dependence of CdGa{sub 2}Se{sub 4} absorption coefficient in the polarized radiation at 5-300 K and that of the emission intensity at 4.2-77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiation intensity with decreasing temperature are attributed to a different velocity of motion of states of the valence-band top {Gamma}{sub 3} + {Gamma}{sub 4} and {Gamma}{sub 2} with changing tetragonal compression. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782611030134 |