Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa{sub 2}Se{sub 4}

The results of investigation of the temperature dependence of CdGa{sub 2}Se{sub 4} absorption coefficient in the polarized radiation at 5-300 K and that of the emission intensity at 4.2-77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiati...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-03, Vol.45 (3)
Hauptverfasser: Kerimova, T. G., Guliyev, R. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:The results of investigation of the temperature dependence of CdGa{sub 2}Se{sub 4} absorption coefficient in the polarized radiation at 5-300 K and that of the emission intensity at 4.2-77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiation intensity with decreasing temperature are attributed to a different velocity of motion of states of the valence-band top {Gamma}{sub 3} + {Gamma}{sub 4} and {Gamma}{sub 2} with changing tetragonal compression.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611030134