Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-03, Vol.45 (3), p.392-396
Hauptverfasser: Altukhov, A. A., Vikharev, A. L., Gorbachev, A. M., Dukhnovsky, M. P., Zemlyakov, V. E., Ziablyuk, K. N., Mitenkin, A. V., Muchnikov, A. B., Radishev, D. B., Ratnikova, A. K., Fedorov, Yu. Yu
Format: Artikel
Sprache:eng
Schlagworte:
BORON IONS
Chemical properties
CHEMICAL VAPOR DEPOSITION
DIAMONDS
Fabrication
HOLE MOBILITY
ION IMPLANTATION
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MONOCRYSTALS
Nuclear radiation
Optical properties
Physics
Physics and Astronomy
SEMICONDUCTOR MATERIALS
Semiconductors
SUBSTRATES
Testing of Materials and Structures
Treatment
VAPORS
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm 2 V −1 s −1 (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261103002X