Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

The local density of states in self-assembled GeSi/Si(001) nanoislands is investigated for the first time by combined tunneling and atomic-force scanning microscopy. Current images and tunneling spectra of individual GeSi/Si(001) islands are obtained. These measurements yield the spatial and energy...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-03, Vol.45 (3), p.403-407
Hauptverfasser: Borodin, P. A., Bukharaev, A. A., Filatov, D. O., Isakov, M. A., Shengurov, V. G., Chalkov, V. Yu, Denisov, Yu. A.
Format: Artikel
Sprache:eng
Schlagworte:
ATOMIC FORCE MICROSCOPY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
ENERGY SPECTRA
Fabrication
GERMANIUM SILICIDES
Investigations
Magnetic Materials
Magnetism
Microscope and microscopy
Physics
Physics and Astronomy
SPECTROSCOPY
Testing of Materials and Structures
Treatment
TUNNEL EFFECT
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Zusammenfassung:The local density of states in self-assembled GeSi/Si(001) nanoislands is investigated for the first time by combined tunneling and atomic-force scanning microscopy. Current images and tunneling spectra of individual GeSi/Si(001) islands are obtained. These measurements yield the spatial and energy distributions of the local density of states in GeSi islands, respectively. The tunneling spectroscopy data demonstrate that uncapped Ge 0.3 Si 0.7 /Si(001) islands behave as type-I heterostructures.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611030080