Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system
A study of the optical properties of the Se-S system has revealed a correlation between the dependences of optical absorption coefficient α, effective concentration of charged defects N t , and characteristic energy E 0 corresponding to the Urbach optical absorption in the spectral region where the...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-04, Vol.45 (4), p.493-498 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A study of the optical properties of the Se-S system has revealed a correlation between the dependences of optical absorption coefficient α, effective concentration of charged defects
N
t
, and characteristic energy
E
0
corresponding to the Urbach optical absorption in the spectral region where the Urbach rule works for the Se-S system on the S concentration. These optical properties are controlled by charged defects. It is shown that concentrations of intrinsic charged defects can be changed by variation in composition of the Se-S system. Reflectance spectra of amorphous solid solutions of the Se-S system are studied within the energy range 1–6 eV. Using the Kramers-Kronig method, spectral dependences of optical constants and derivative optical and dielectric functions are calculated. Variation in the spectra of optical parameters with composition of the Se-S system are explained within a cluster model in which the density of electron states is a function of atomic configurations in clusters, i.e., of the character of a short-range order. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782611040087 |