Matrices of 960-nm vertical-cavity surface-emitting lasers
Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength o...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-06, Vol.45 (6), p.818-821 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 45 |
| creator | Maleev, N. A. Kuzmenkov, A. G. Shulenkov, A. S. Blokhin, S. A. Kulagina, M. M. Zadiranov, Yu. M. Tikhomirov, V. G. Gladyshev, A. G. Nadtochiy, A. M. Nikitina, E. V. Lott, J. A. Svede-Shvets, V. N. Ledentsov, N. N. Ustinov, V. M. |
| description | Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 × 7 elements does not exceed ±20%. |
| doi_str_mv | 10.1134/S1063782611060133 |
| format | Article |
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Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. 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| subjects | EFFICIENCY Gallium arsenide GALLIUM ARSENIDES LASERS Magnetic Materials Magnetism MATERIALS SCIENCE Nuclear radiation Physics Physics and Astronomy Physics Of Semiconductor Devices SUBSTRATES SURFACES THRESHOLD CURRENT |
| title | Matrices of 960-nm vertical-cavity surface-emitting lasers |
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