Matrices of 960-nm vertical-cavity surface-emitting lasers

Matrices of 960-nm vertical-cavity surface-emitting lasers

Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-06, Vol.45 (6), p.818-821
Hauptverfasser: Maleev, N. A., Kuzmenkov, A. G., Shulenkov, A. S., Blokhin, S. A., Kulagina, M. M., Zadiranov, Yu. M., Tikhomirov, V. G., Gladyshev, A. G., Nadtochiy, A. M., Nikitina, E. V., Lott, J. A., Svede-Shvets, V. N., Ledentsov, N. N., Ustinov, V. M.
Format: Artikel
Sprache:eng
Schlagworte:
EFFICIENCY
Gallium arsenide
GALLIUM ARSENIDES
LASERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Nuclear radiation
Physics
Physics and Astronomy
Physics Of Semiconductor Devices
SUBSTRATES
SURFACES
THRESHOLD CURRENT
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are implemented. Individual laser emitters with a current aperture diameter of 6–7 μm exhibit continuous-wave room-temperature lasing at a wavelength of 958–962 nm with threshold currents of 1.1–1.3 mA, differential efficiency of 0.5–0.8 mW/mA, and a maximum output power of 7.5–9 mW. The parameter variation of individual emitters within a matrix chip containing 5 × 7 elements does not exceed ±20%.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611060133