The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS
As a result of a complex study of the heterophase photosensitive material CdS-PbS by the methods of scanning electron microscopy and Auger spectrometry, it has been found that the radiation resistance of this material depends on the morphology and phase composition at its surface. It is shown that,...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-07, Vol.45 (7), p.888-893 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | As a result of a complex study of the heterophase photosensitive material CdS-PbS by the methods of scanning electron microscopy and Auger spectrometry, it has been found that the radiation resistance of this material depends on the morphology and phase composition at its surface. It is shown that, as the temperature of annealing is increased, aggregations with predominant content of PbS grow; simultaneously, the composition of these aggregations varies as a consequence of the reaction of substitution of sulfur atoms with oxygen atoms. The latter of the aforementioned processes brings about a decrease in the radiation resistance of the heterophase photosensitive material CdS-PbS, which is accounted for by a decrease in the gettering due to appearance of an intermediate oxidized layer between PbS and CdS. An increase in the sizes and number of spherical aggregations at the surface, which consist of crystallites with predominant content of PbS, brings about an increase in the radiation resistance. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S106378261107013X |