Photoluminescence in silicon implanted with erbium ions at an elevated temperature
Photoluminescence spectra of n -type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2011-08, Vol.45 (8), p.1006-1008 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Photoluminescence spectra of
n
-type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er
3+
ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782611080197 |