Photoluminescence in silicon implanted with erbium ions at an elevated temperature

Photoluminescence spectra of n -type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-08, Vol.45 (8), p.1006-1008
Hauptverfasser: Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Sakharov, V. I., Serenkov, I. T., Vdovin, V. I., Parshin, E. O., Makoviichuk, M. I.
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Sprache:eng
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Zusammenfassung:Photoluminescence spectra of n -type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er 3+ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611080197