Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells

Room temperature surface photovoltage (SPV), differential surface photovoltage (DSPV), and photoreflectance (PR) measurements were performed on InGaAs/AlAsSb QWs grown on InP substrates. Clear and well-resolved structures, which could be attributed to the interband optical transitions originating in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Mozume, T, Gozu, S
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH METHODS CURRENTS ELECTRIC CURRENTS ENERGY LEVELS EPITAXY GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS INDIUM PHOSPHIDES INTERFACES MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES OPTICAL PROPERTIES PHOSPHIDES PHOSPHORUS COMPOUNDS PHOTOCURRENTS PHYSICAL PROPERTIES PNICTIDES QUANTUM WELLS SPECTRAL REFLECTANCE SUBSTRATES SURFACES TEMPERATURE MEASUREMENT
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Room temperature surface photovoltage (SPV), differential surface photovoltage (DSPV), and photoreflectance (PR) measurements were performed on InGaAs/AlAsSb QWs grown on InP substrates. Clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs, were observed in every spectrum. Transition energies measured from the SPV, DSPV, and PR spectra correspond well with those theoretically calculated from the confined energy levels in the QWs. Features those can be attributed to the transitions at the AlAsSb to InP hetero-interfaces were observed in the SPV and DSPV spectra.
ISSN:	0094-243X 1551-7616
DOI:	10.1063/1.3666472