The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell
In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughne...
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| creator | You, L. LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 Chevalier, N. Bernardi, S. Martinez, E. Mariolle, D. Feuillet, G. Chabli, A. Bertin, F. Kogelschatz, M. Bremond, G. |
| description | In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). We observe the interdiffusion at the CdTe/CdS interface and determine the composition of the active layers to be CdTe/CdS{sub 0.7}Te{sub 0.3}. |
| doi_str_mv | 10.1063/1.3657876 |
| format | Conference Proceeding |
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The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). 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The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). 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LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9 ; Chevalier, N. ; Bernardi, S. ; Martinez, E. ; Mariolle, D. ; Feuillet, G. ; Chabli, A. ; Bertin, F. ; Kogelschatz, M. ; Bremond, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o183t-a1e13ba520c1d0486567c4587666874560bd3fa1e3edec1ab9a243516b224f73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AUGER ELECTRON SPECTROSCOPY</topic><topic>CADMIUM COMPOUNDS</topic><topic>CADMIUM SULFIDES</topic><topic>CADMIUM TELLURIDES</topic><topic>CAPACITANCE</topic><topic>CHALCOGENIDES</topic><topic>CHARGE TRANSPORT</topic><topic>CHEMICAL COMPOSITION</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTRON SPECTROSCOPY</topic><topic>ELECTRONS</topic><topic>ELEMENTARY PARTICLES</topic><topic>ENERGY LEVELS</topic><topic>FERMI LEVEL</topic><topic>FERMIONS</topic><topic>GLASS</topic><topic>HOLES</topic><topic>INORGANIC PHOSPHORS</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>LEPTONS</topic><topic>MATERIALS SCIENCE</topic><topic>MECHANICAL POLISHING</topic><topic>PHOSPHORS</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>PHYSICAL PROPERTIES</topic><topic>POLISHING</topic><topic>ROUGHNESS</topic><topic>SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>SOLAR EQUIPMENT</topic><topic>SPECTROSCOPY</topic><topic>SULFIDES</topic><topic>SULFUR COMPOUNDS</topic><topic>SURFACE FINISHING</topic><topic>SURFACE PROPERTIES</topic><topic>TELLURIDES</topic><topic>TELLURIUM COMPOUNDS</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>You, L.</creatorcontrib><creatorcontrib>LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9</creatorcontrib><creatorcontrib>Chevalier, N.</creatorcontrib><creatorcontrib>Bernardi, S.</creatorcontrib><creatorcontrib>Martinez, E.</creatorcontrib><creatorcontrib>Mariolle, D.</creatorcontrib><creatorcontrib>Feuillet, G.</creatorcontrib><creatorcontrib>Chabli, A.</creatorcontrib><creatorcontrib>Bertin, F.</creatorcontrib><creatorcontrib>Kogelschatz, M.</creatorcontrib><creatorcontrib>Bremond, G.</creatorcontrib><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>You, L.</au><au>LTM-CNRS, 17, rue des Martyrs, F38054 Grenoble Cedex 9</au><au>Chevalier, N.</au><au>Bernardi, S.</au><au>Martinez, E.</au><au>Mariolle, D.</au><au>Feuillet, G.</au><au>Chabli, A.</au><au>Bertin, F.</au><au>Kogelschatz, M.</au><au>Bremond, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell</atitle><btitle>AIP conference proceedings</btitle><date>2011-01-01</date><risdate>2011</risdate><volume>1395</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). We observe the interdiffusion at the CdTe/CdS interface and determine the composition of the active layers to be CdTe/CdS{sub 0.7}Te{sub 0.3}.</abstract><cop>United States</cop><doi>10.1063/1.3657876</doi></addata></record> |
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| identifier | ISSN: 0094-243X |
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| language | eng |
| recordid | cdi_osti_scitechconnect_21612171 |
| source | AIP Journals Complete |
| subjects | AUGER ELECTRON SPECTROSCOPY CADMIUM COMPOUNDS CADMIUM SULFIDES CADMIUM TELLURIDES CAPACITANCE CHALCOGENIDES CHARGE TRANSPORT CHEMICAL COMPOSITION DIRECT ENERGY CONVERTERS ELECTRICAL PROPERTIES ELECTRON SPECTROSCOPY ELECTRONS ELEMENTARY PARTICLES ENERGY LEVELS FERMI LEVEL FERMIONS GLASS HOLES INORGANIC PHOSPHORS INTERFACES LAYERS LEPTONS MATERIALS SCIENCE MECHANICAL POLISHING PHOSPHORS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PHYSICAL PROPERTIES POLISHING ROUGHNESS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT SPECTROSCOPY SULFIDES SULFUR COMPOUNDS SURFACE FINISHING SURFACE PROPERTIES TELLURIDES TELLURIUM COMPOUNDS THIN FILMS |
| title | The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell |
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