The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell

In this work, we report a series of Kelvin Force Microscopy (KFM) measurements, suitable to observe the topography and the contact potential difference (CPD) distribution of the following stack: CdTe/CdS/ITO/glass. The sample is prepared by mechanical polishing after cleavage to decrease the roughness. In order to have a better understanding of the charge transport inside the solar cell and to vary the Fermi level pinning effect, different bias are applied to the sample. The CPD variations with different bias on cross-section in dark condition are presented. We observe the reverse bias widens the CdTe/CdS depletion region. Under illumination, electron and holes are generated near the interface and varies the CPD distribution. Additionally, the chemical composition of each layer has been investigated by nano-Auger electron spectroscopy (AES). We observe the interdiffusion at the CdTe/CdS interface and determine the composition of the active layers to be CdTe/CdS{sub 0.7}Te{sub 0.3}.