Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors

Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors

Deep Level Transient Spectroscopy (DLTS) technique is useful tool to study process and radiation induced defects in semiconductor materials and devices. The different types of radiation induced trap levels in the collector-base depletion region of the transistors were studied by DLTS technique.

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Bibliographische Detailangaben
1. Verfasser: Prakash, APGnana
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CURRENTS
ENERGY LOSSES
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IONS
LOSSES
MATERIALS
MATERIALS SCIENCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRANSISTORS
TRAPS
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Beschreibung
Zusammenfassung:Deep Level Transient Spectroscopy (DLTS) technique is useful tool to study process and radiation induced defects in semiconductor materials and devices. The different types of radiation induced trap levels in the collector-base depletion region of the transistors were studied by DLTS technique.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3606235