Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures

Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the “metal-layered semiconductor” interface were formed after growing Ni layers on the p -GaSe (0001) surface. Current–voltage and capacitance–voltage characteristics of hybrid structures were studied in the temperature range of 220–350 K. The dependence of the impedance spectra on the bias voltage was studied at various temperatures. The frequency dependences of the impedance at high frequencies ( f = 10 6 Hz) are discussed in terms of the phenomena of spin injection and extraction in structures with an ultrathin spin-selective Ni/n-Ga 2 Se 3 barrier and the effects of spin diffusion and relaxation in the semiconductor substrate. The room-temperature phenomena of the Coulomb blockade and negative differential capacitance were detected. These phenomena are explained based on an analysis of transport processes in a narrow region near the “ferromagnetic metal–semiconductor” interface, where nanoscale grains are arranged.