Features of conduction mechanisms in Si/oligo-{beta}-naphthol/metal heterostructures

Features of conduction mechanisms in Si/oligo-{beta}-naphthol/metal heterostructures

Conduction mechanisms in Si-polymer-metal heterostructures with oligo-{beta}-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport m...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-07, Vol.44 (7)
Hauptverfasser: Hasannli, Sh. M., Mursakulov, N. N., Samedova, U. F., Abdulzade, N. N., Mamedov, B. A., Guseynov, R. K.
Format: Artikel
Sprache:eng
Schlagworte:
CHARGE TRANSPORT
ELECTRIC FIELDS
ELEMENTS
EMISSION
MATERIALS SCIENCE
METALS
POLYMERS
TEMPERATURE RANGE
TUNNEL EFFECT
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Zusammenfassung:Conduction mechanisms in Si-polymer-metal heterostructures with oligo-{beta}-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechanisms operate in different temperature ranges and under different electric fields.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610070080