Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous As 2 Se 3 layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2010-08, Vol.44 (8), p.1004-1007
Hauptverfasser:	Anisimova, N. I., Bordovsky, V. A., Grabko, G. I., Castro, R. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC ARSENIC COMPOUNDS ARSENIC SELENIDES BISMUTH BUILDUP CHALCOGENIDES CHARGE CARRIERS CHARGE TRANSPORT Electric properties Electrical and Optical Properties of Semiconductors ELEMENTS IMPURITIES LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE METALS MOBILITY Physics Physics and Astronomy RELAXATION SELENIDES SELENIUM COMPOUNDS Semiconductors SEMIMETALS THIN FILMS
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