Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous As 2 Se 3 layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed.