The nature of edge luminescence of CdTe:Mg diffusion layers

The nature of edge luminescence of CdTe:Mg diffusion layers

The effect of the isovalent Mg impurity on the luminescence of CdTe is studied. Diffusion doping allows fabrication of CdTe:Mg layers that show efficient edge luminescence. The emission is attributed to interband electron-hole recombination and annihilation of excitons bound at the isovalent Mg impu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-09, Vol.44 (9), p.1167-1169
Hauptverfasser: Makhniy, V. P., Kosolovskiy, V. V., Slyotov, M. M., Skrypnyk, M. V., Slyotov, A. M.
Format: Artikel
Sprache:eng
Schlagworte:
ANNIHILATION
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DIFFUSION
Electrical and Optical Properties of Semiconductors
EMISSION
EXCITONS
FABRICATION
HOLES
IMPURITIES
INTERACTIONS
LAYERS
LUMINESCENCE
Magnetic Materials
Magnetism
MATERIALS SCIENCE
PARTICLE INTERACTIONS
PHOTON EMISSION
Physics
Physics and Astronomy
QUASI PARTICLES
RECOMBINATION
TELLURIDES
TELLURIUM COMPOUNDS
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The effect of the isovalent Mg impurity on the luminescence of CdTe is studied. Diffusion doping allows fabrication of CdTe:Mg layers that show efficient edge luminescence. The emission is attributed to interband electron-hole recombination and annihilation of excitons bound at the isovalent Mg impurity.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610090101