Differential capacitance of a semiconductor film

Differential capacitance of a semiconductor film

A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispers...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-10, Vol.44 (10), p.1292-1296
Hauptverfasser: Tsurikov, D. E., Yafyasov, A. M.
Format: Artikel
Sprache:eng
Schlagworte:
CALCULATION METHODS
CAPACITANCE
Dielectric films
DIMENSIONS
DISPERSION RELATIONS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
Interfaces
Magnetic Materials
Magnetism
MATERIALS
MATERIALS SCIENCE
PHYSICAL PROPERTIES
Physics
Physics and Astronomy
SEMICONDUCTOR MATERIALS
Semiconductor Structures
SPACE CHARGE
SURFACES
THICKNESS
Thin films
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Beschreibung
Zusammenfassung:A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation ( n -Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261010009X