Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region

InAs/GaAs multilayered heterostructures containing dense arrays of the low-defect partially relaxed InAs nanoclusters larger than defect-free quantum dots are fabricated by metal-organic chemical vapor deposition in an atmospheric-pressure reactor. The structures have intense photoconductivity in the wavelength range of 1–2 μm at room temperature. The detectivity of fabricated prototypes of photodetectors is D * = 10 9 cm Hz 1/2 W −1 . The relaxation time of photoconductivity at a wavelength of 1.5 μm is less than 10 ns.