Radiation effects in nanoelectronic elements
Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect tran...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-12, Vol.44 (13), p.1699-1702 |
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| container_end_page | 1702 |
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| container_issue | 13 |
| container_start_page | 1699 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 44 |
| creator | Gromov, D. V. Elesin, V. V. Petrov, G. V. Bobrinetskii, I. I. Nevolin, V. K. |
| description | Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established. |
| doi_str_mv | 10.1134/S1063782610130166 |
| format | Article |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2010-12, Vol.44 (13), p.1699-1702 |
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| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Analysis ARSENIC COMPOUNDS ARSENIDES CARBON DEFECTS DEPOSITION ELEMENTS FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS IONIZING RADIATIONS Magnetic Materials Magnetism MATERIALS SCIENCE METALS Microwave devices NANOSTRUCTURES Nanotechnology NANOTUBES NONMETALS Nuclear radiation Physics Physics and Astronomy PNICTIDES RADIATIONS SEMICONDUCTOR DEVICES SUBSTRATES TITANIUM TRANSISTORS TRANSITION ELEMENTS |
| title | Radiation effects in nanoelectronic elements |
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