Radiation effects in nanoelectronic elements

Radiation effects in nanoelectronic elements

Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect tran...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-12, Vol.44 (13), p.1699-1702
Hauptverfasser: Gromov, D. V., Elesin, V. V., Petrov, G. V., Bobrinetskii, I. I., Nevolin, V. K.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
ARSENIC COMPOUNDS
ARSENIDES
CARBON
DEFECTS
DEPOSITION
ELEMENTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
METALS
Microwave devices
NANOSTRUCTURES
Nanotechnology
NANOTUBES
NONMETALS
Nuclear radiation
Physics
Physics and Astronomy
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SUBSTRATES
TITANIUM
TRANSISTORS
TRANSITION ELEMENTS
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610130166