Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO{sub 2} composites in the 1.3-1.6 {mu}m spectral range

The parameters of three-dimensional photonic crystals based on opal-VO{sub 2} composite films in the 1.3-1.6 {mu}m spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25-0.6) wherein the com...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-12, Vol.44 (12)
Hauptverfasser: Pevtsov, A. B., Grudinkin, S. A., Poddubny, A. N., Kaplan, S. F., Kurdyukov, D. A., Golubev, V. G.
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Sprache:eng
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Zusammenfassung:The parameters of three-dimensional photonic crystals based on opal-VO{sub 2} composite films in the 1.3-1.6 {mu}m spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25-0.6) wherein the composite exhibits the properties of a three-dimensional insulator photonic crystal. On the basis of the opal-VO{sub 2} composites, three-dimensional photonic film crystals are synthesized with specified parameters that provide a maximum shift of the photonic band gap in the vicinity of the wavelength {approx}1.5 {mu}m ({approx}170 meV) at the semiconductor-metal transition in VO{sub 2}.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610120018