Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ...

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Veröffentlicht in:	Applied physics letters 2011-05, Vol.98 (22), p.221902-221902-3
Hauptverfasser:	Liang, H. L., Mei, Z. X., Zhang, Q. H., Gu, L., Liang, S., Hou, Y. N., Ye, D. Q., Gu, C. Z., Yu, R. C., Du, X. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALKALINE EARTH METAL COMPOUNDS BERYLLIUM COMPOUNDS BERYLLIUM OXIDES CHALCOGENIDES CHEMICAL REACTIONS CRYSTAL GROWTH METHODS ELECTROMAGNETIC RADIATION ELEMENTS EPITAXY HETEROJUNCTIONS INTERFACES LAYERS MAGNESIUM COMPOUNDS MATERIALS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY OXIDATION OXIDES OXYGEN COMPOUNDS P-N JUNCTIONS PHOTODETECTORS RADIATIONS SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SUBSTRATES SURFACES ULTRAVIOLET RADIATION WAVELENGTHS ZINC COMPOUNDS
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