Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ...

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Veröffentlicht in:Applied physics letters 2011-05, Vol.98 (22), p.221902-221902-3
Hauptverfasser: Liang, H. L., Mei, Z. X., Zhang, Q. H., Gu, L., Liang, S., Hou, Y. N., Ye, D. Q., Gu, C. Z., Yu, R. C., Du, X. L.
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Sprache:eng
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Zusammenfassung:High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3595342