Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ...
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| Veröffentlicht in: | Applied physics letters 2011-05, Vol.98 (22), p.221902-221902-3 |
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| container_title | Applied physics letters |
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| creator | Liang, H. L. Mei, Z. X. Zhang, Q. H. Gu, L. Liang, S. Hou, Y. N. Ye, D. Q. Gu, C. Z. Yu, R. C. Du, X. L. |
| description | High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent
in situ
oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies. |
| doi_str_mv | 10.1063/1.3595342 |
| format | Article |
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in situ
oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3595342</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALKALINE EARTH METAL COMPOUNDS ; BERYLLIUM COMPOUNDS ; BERYLLIUM OXIDES ; CHALCOGENIDES ; CHEMICAL REACTIONS ; CRYSTAL GROWTH METHODS ; ELECTROMAGNETIC RADIATION ; ELEMENTS ; EPITAXY ; HETEROJUNCTIONS ; INTERFACES ; LAYERS ; MAGNESIUM COMPOUNDS ; MATERIALS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; OXIDATION ; OXIDES ; OXYGEN COMPOUNDS ; P-N JUNCTIONS ; PHOTODETECTORS ; RADIATIONS ; SEMICONDUCTOR JUNCTIONS ; SEMICONDUCTOR MATERIALS ; SEMIMETALS ; SILICON ; SUBSTRATES ; SURFACES ; ULTRAVIOLET RADIATION ; WAVELENGTHS ; ZINC COMPOUNDS</subject><ispartof>Applied physics letters, 2011-05, Vol.98 (22), p.221902-221902-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-2ccba1c976f4e4a771352cf486f8c6296087cfa6475d5f7e33bcfc7d270fe5563</citedby><cites>FETCH-LOGICAL-c378t-2ccba1c976f4e4a771352cf486f8c6296087cfa6475d5f7e33bcfc7d270fe5563</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3595342$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76127,76133</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21518465$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Liang, H. L.</creatorcontrib><creatorcontrib>Mei, Z. X.</creatorcontrib><creatorcontrib>Zhang, Q. H.</creatorcontrib><creatorcontrib>Gu, L.</creatorcontrib><creatorcontrib>Liang, S.</creatorcontrib><creatorcontrib>Hou, Y. N.</creatorcontrib><creatorcontrib>Ye, D. Q.</creatorcontrib><creatorcontrib>Gu, C. Z.</creatorcontrib><creatorcontrib>Yu, R. C.</creatorcontrib><creatorcontrib>Du, X. L.</creatorcontrib><title>Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors</title><title>Applied physics letters</title><description>High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent
in situ
oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.</description><subject>ALKALINE EARTH METAL COMPOUNDS</subject><subject>BERYLLIUM COMPOUNDS</subject><subject>BERYLLIUM OXIDES</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL REACTIONS</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>ELEMENTS</subject><subject>EPITAXY</subject><subject>HETEROJUNCTIONS</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>MAGNESIUM COMPOUNDS</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>OXIDATION</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>P-N JUNCTIONS</subject><subject>PHOTODETECTORS</subject><subject>RADIATIONS</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SUBSTRATES</subject><subject>SURFACES</subject><subject>ULTRAVIOLET RADIATION</subject><subject>WAVELENGTHS</subject><subject>ZINC COMPOUNDS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL3yDgykXaZDJJZjaCFi-Fli7UjZshzSQzKWNSklTw7U1p0ZWrw4HvXP4PgGuCJwRzOiUTympGy-IEjAgWAlFCqlMwwhhTxGtGzsFFjJvcsoLSEYhzl3QwUmmoXWed1sG6DnoDe9v1aNkh5TPhElx2H241fdCr6auFxge4RQ72Ok_7zc6pZL2D0Q8yoPVgXQt3Qwryy_pBJ7jtffJtZlXyIV6CMyOHqK-OdQzenx7fZi9osXqez-4XSFFRJVQotZZE1YKbUpdSCEJZoUxZcVMpXtQcV0IZyUvBWmaEpnStjBJtIbDRjHE6BjeHvT4m20Rl8_0-x3H5jaYgjFQlZ5m6PVAq-BiDNs022E8ZvhuCm73ThjRHp5m9O7D7ZXIf-X_4V2zzJ5b-AGKSf90</recordid><startdate>20110530</startdate><enddate>20110530</enddate><creator>Liang, H. L.</creator><creator>Mei, Z. X.</creator><creator>Zhang, Q. H.</creator><creator>Gu, L.</creator><creator>Liang, S.</creator><creator>Hou, Y. N.</creator><creator>Ye, D. Q.</creator><creator>Gu, C. Z.</creator><creator>Yu, R. C.</creator><creator>Du, X. L.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110530</creationdate><title>Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors</title><author>Liang, H. L. ; Mei, Z. X. ; Zhang, Q. H. ; Gu, L. ; Liang, S. ; Hou, Y. N. ; Ye, D. Q. ; Gu, C. Z. ; Yu, R. C. ; Du, X. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-2ccba1c976f4e4a771352cf486f8c6296087cfa6475d5f7e33bcfc7d270fe5563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ALKALINE EARTH METAL COMPOUNDS</topic><topic>BERYLLIUM COMPOUNDS</topic><topic>BERYLLIUM OXIDES</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL REACTIONS</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>ELEMENTS</topic><topic>EPITAXY</topic><topic>HETEROJUNCTIONS</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>MAGNESIUM COMPOUNDS</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>OXIDATION</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>P-N JUNCTIONS</topic><topic>PHOTODETECTORS</topic><topic>RADIATIONS</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SUBSTRATES</topic><topic>SURFACES</topic><topic>ULTRAVIOLET RADIATION</topic><topic>WAVELENGTHS</topic><topic>ZINC COMPOUNDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liang, H. L.</creatorcontrib><creatorcontrib>Mei, Z. X.</creatorcontrib><creatorcontrib>Zhang, Q. H.</creatorcontrib><creatorcontrib>Gu, L.</creatorcontrib><creatorcontrib>Liang, S.</creatorcontrib><creatorcontrib>Hou, Y. N.</creatorcontrib><creatorcontrib>Ye, D. Q.</creatorcontrib><creatorcontrib>Gu, C. Z.</creatorcontrib><creatorcontrib>Yu, R. C.</creatorcontrib><creatorcontrib>Du, X. L.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liang, H. L.</au><au>Mei, Z. X.</au><au>Zhang, Q. H.</au><au>Gu, L.</au><au>Liang, S.</au><au>Hou, Y. N.</au><au>Ye, D. Q.</au><au>Gu, C. Z.</au><au>Yu, R. C.</au><au>Du, X. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors</atitle><jtitle>Applied physics letters</jtitle><date>2011-05-30</date><risdate>2011</risdate><volume>98</volume><issue>22</issue><spage>221902</spage><epage>221902-3</epage><pages>221902-221902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent
in situ
oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3595342</doi></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ALKALINE EARTH METAL COMPOUNDS BERYLLIUM COMPOUNDS BERYLLIUM OXIDES CHALCOGENIDES CHEMICAL REACTIONS CRYSTAL GROWTH METHODS ELECTROMAGNETIC RADIATION ELEMENTS EPITAXY HETEROJUNCTIONS INTERFACES LAYERS MAGNESIUM COMPOUNDS MATERIALS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY OXIDATION OXIDES OXYGEN COMPOUNDS P-N JUNCTIONS PHOTODETECTORS RADIATIONS SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SUBSTRATES SURFACES ULTRAVIOLET RADIATION WAVELENGTHS ZINC COMPOUNDS |
| title | Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors |
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