A InGaN/GaN quantum dot green ( λ = 524   nm ) laser

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA / cm 2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼ 1.1 % , respectively, at 1.3 kA / cm 2 . The value of T 0 = 233 K in the temperature range of 260-300 K.