Residual and nitrogen doping of homoepitaxial nonpolar m -plane ZnO films grown by molecular beam epitaxy

Residual and nitrogen doping of homoepitaxial nonpolar m -plane ZnO films grown by molecular beam epitaxy

We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-plane ZnO and ZnO:N films over a large temperature range. The nonintentionally doped ZnO layers exhibit a residual doping as low as ∼ 10 14   cm − 3 . Despite an effective incorporation of nitrogen, p -type dopin...

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Veröffentlicht in:Applied physics letters 2011-03, Vol.98 (13), p.131915-131915-3
Hauptverfasser: Taïnoff, D., Al-Khalfioui, M., Deparis, C., Vinter, B., Teisseire, M., Morhain, C., Chauveau, J.-M.
Format: Artikel
Sprache:eng
Schlagworte:
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELEMENTS
EPITAXY
MATERIALS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NITROGEN
NONMETALS
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE
ZINC COMPOUNDS
ZINC OXIDES
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Zusammenfassung:We report the homoepitaxial growth by molecular beam epitaxy of high quality nonpolar m-plane ZnO and ZnO:N films over a large temperature range. The nonintentionally doped ZnO layers exhibit a residual doping as low as ∼ 10 14   cm − 3 . Despite an effective incorporation of nitrogen, p -type doping was not achieved, ZnO:N films becoming insulating. The high purity of the layers and their low residual n -type doping evidence compensation mechanisms in ZnO:N films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3572025