Graphene growth by molecular beam epitaxy on the carbon-face of SiC
Graphene layers have been grown by molecular beam epitaxy (MBE) on the ( 000 1 ¯ ) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of Si...
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| Veröffentlicht in: | Applied physics letters 2010-12, Vol.97 (24), p.241907-241907-3 |
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| container_end_page | 241907-3 |
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| container_issue | 24 |
| container_start_page | 241907 |
| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Moreau, E. Godey, S. Ferrer, F. J. Vignaud, D. Wallart, X. Avila, J. Asensio, M. C. Bournel, F. Gallet, J.-J. |
| description | Graphene layers have been grown by molecular beam epitaxy (MBE) on the
(
000
1
¯
)
C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC
(
000
1
¯
)
, indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers. |
| doi_str_mv | 10.1063/1.3526720 |
| format | Article |
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(
000
1
¯
)
C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC
(
000
1
¯
)
, indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3526720</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ACCELERATORS ; ATOMIC FORCE MICROSCOPY ; CARBIDES ; CARBON ; CARBON COMPOUNDS ; COHERENT SCATTERING ; Condensed Matter ; CRYSTAL GROWTH METHODS ; CYCLIC ACCELERATORS ; DECOUPLING ; DIFFRACTION ; ELECTRON DIFFRACTION ; ELECTRON SPECTROSCOPY ; ELEMENTS ; EPITAXY ; GRAPHITIZATION ; HONEYCOMB STRUCTURES ; LAYERS ; MATERIALS SCIENCE ; MECHANICAL STRUCTURES ; MICROSCOPY ; MOLECULAR BEAM EPITAXY ; NONMETALS ; PHOTOELECTRON SPECTROSCOPY ; Physics ; SCATTERING ; SILICON CARBIDES ; SILICON COMPOUNDS ; SPECTRA ; SPECTROSCOPY ; SYNCHROTRONS ; ULTRAVIOLET SPECTRA</subject><ispartof>Applied physics letters, 2010-12, Vol.97 (24), p.241907-241907-3</ispartof><rights>2010 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-9d1ce2f8bf2b3dd34158697a38ce29c496c480a230b6c5c8abc83053fc2879bf3</citedby><cites>FETCH-LOGICAL-c447t-9d1ce2f8bf2b3dd34158697a38ce29c496c480a230b6c5c8abc83053fc2879bf3</cites><orcidid>0000-0001-6452-3415 ; 0000-0002-4863-7858 ; 0000-0002-0915-0043 ; 0000-0003-2406-3519</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3526720$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00548720$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/21518208$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Moreau, E.</creatorcontrib><creatorcontrib>Godey, S.</creatorcontrib><creatorcontrib>Ferrer, F. J.</creatorcontrib><creatorcontrib>Vignaud, D.</creatorcontrib><creatorcontrib>Wallart, X.</creatorcontrib><creatorcontrib>Avila, J.</creatorcontrib><creatorcontrib>Asensio, M. C.</creatorcontrib><creatorcontrib>Bournel, F.</creatorcontrib><creatorcontrib>Gallet, J.-J.</creatorcontrib><title>Graphene growth by molecular beam epitaxy on the carbon-face of SiC</title><title>Applied physics letters</title><description>Graphene layers have been grown by molecular beam epitaxy (MBE) on the
(
000
1
¯
)
C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC
(
000
1
¯
)
, indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.</description><subject>ACCELERATORS</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>CARBIDES</subject><subject>CARBON</subject><subject>CARBON COMPOUNDS</subject><subject>COHERENT SCATTERING</subject><subject>Condensed Matter</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>CYCLIC ACCELERATORS</subject><subject>DECOUPLING</subject><subject>DIFFRACTION</subject><subject>ELECTRON DIFFRACTION</subject><subject>ELECTRON SPECTROSCOPY</subject><subject>ELEMENTS</subject><subject>EPITAXY</subject><subject>GRAPHITIZATION</subject><subject>HONEYCOMB STRUCTURES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MECHANICAL STRUCTURES</subject><subject>MICROSCOPY</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NONMETALS</subject><subject>PHOTOELECTRON SPECTROSCOPY</subject><subject>Physics</subject><subject>SCATTERING</subject><subject>SILICON CARBIDES</subject><subject>SILICON COMPOUNDS</subject><subject>SPECTRA</subject><subject>SPECTROSCOPY</subject><subject>SYNCHROTRONS</subject><subject>ULTRAVIOLET SPECTRA</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK4e_AcBTx665qMf6UVYiu4KCx7Uc0hmExtpmyWNH_33dumqJ0_DvDwzwzwIXVKyoCTnN3TBM5YXjByhGSVFkXBKxTGaEUJ4kpcZPUVnff82thnjfIaqVVC72nQGvwb_GWusB9z6xsB7owLWRrXY7FxUXwP2HY61waCC9l1iFRjsLX5y1Tk6sarpzcWhztHL_d1ztU42j6uHarlJIE2LmJRbCoZZoS3TfLvlKc1EXhaKizEuIS1zSAVRjBOdQwZCaRCcZNwCE0WpLZ-jq2mv76OTPbhooAbfdQaiZDSjghExUtcTVatG7oJrVRikV06ulxu5z8bXUzEa-qB_LATf98HY3wFK5N6npPLgc2RvJ3Z_WEXnu__hH6lykir1IFv-DWnjeo0</recordid><startdate>20101213</startdate><enddate>20101213</enddate><creator>Moreau, E.</creator><creator>Godey, S.</creator><creator>Ferrer, F. 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C. ; Bournel, F. ; Gallet, J.-J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-9d1ce2f8bf2b3dd34158697a38ce29c496c480a230b6c5c8abc83053fc2879bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ACCELERATORS</topic><topic>ATOMIC FORCE MICROSCOPY</topic><topic>CARBIDES</topic><topic>CARBON</topic><topic>CARBON COMPOUNDS</topic><topic>COHERENT SCATTERING</topic><topic>Condensed Matter</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>CYCLIC ACCELERATORS</topic><topic>DECOUPLING</topic><topic>DIFFRACTION</topic><topic>ELECTRON DIFFRACTION</topic><topic>ELECTRON SPECTROSCOPY</topic><topic>ELEMENTS</topic><topic>EPITAXY</topic><topic>GRAPHITIZATION</topic><topic>HONEYCOMB STRUCTURES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MECHANICAL STRUCTURES</topic><topic>MICROSCOPY</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NONMETALS</topic><topic>PHOTOELECTRON SPECTROSCOPY</topic><topic>Physics</topic><topic>SCATTERING</topic><topic>SILICON CARBIDES</topic><topic>SILICON COMPOUNDS</topic><topic>SPECTRA</topic><topic>SPECTROSCOPY</topic><topic>SYNCHROTRONS</topic><topic>ULTRAVIOLET SPECTRA</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moreau, E.</creatorcontrib><creatorcontrib>Godey, S.</creatorcontrib><creatorcontrib>Ferrer, F. J.</creatorcontrib><creatorcontrib>Vignaud, D.</creatorcontrib><creatorcontrib>Wallart, X.</creatorcontrib><creatorcontrib>Avila, J.</creatorcontrib><creatorcontrib>Asensio, M. C.</creatorcontrib><creatorcontrib>Bournel, F.</creatorcontrib><creatorcontrib>Gallet, J.-J.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moreau, E.</au><au>Godey, S.</au><au>Ferrer, F. J.</au><au>Vignaud, D.</au><au>Wallart, X.</au><au>Avila, J.</au><au>Asensio, M. C.</au><au>Bournel, F.</au><au>Gallet, J.-J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Graphene growth by molecular beam epitaxy on the carbon-face of SiC</atitle><jtitle>Applied physics letters</jtitle><date>2010-12-13</date><risdate>2010</risdate><volume>97</volume><issue>24</issue><spage>241907</spage><epage>241907-3</epage><pages>241907-241907-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Graphene layers have been grown by molecular beam epitaxy (MBE) on the
(
000
1
¯
)
C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC
(
000
1
¯
)
, indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3526720</doi><orcidid>https://orcid.org/0000-0001-6452-3415</orcidid><orcidid>https://orcid.org/0000-0002-4863-7858</orcidid><orcidid>https://orcid.org/0000-0002-0915-0043</orcidid><orcidid>https://orcid.org/0000-0003-2406-3519</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-12, Vol.97 (24), p.241907-241907-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21518208 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ACCELERATORS ATOMIC FORCE MICROSCOPY CARBIDES CARBON CARBON COMPOUNDS COHERENT SCATTERING Condensed Matter CRYSTAL GROWTH METHODS CYCLIC ACCELERATORS DECOUPLING DIFFRACTION ELECTRON DIFFRACTION ELECTRON SPECTROSCOPY ELEMENTS EPITAXY GRAPHITIZATION HONEYCOMB STRUCTURES LAYERS MATERIALS SCIENCE MECHANICAL STRUCTURES MICROSCOPY MOLECULAR BEAM EPITAXY NONMETALS PHOTOELECTRON SPECTROSCOPY Physics SCATTERING SILICON CARBIDES SILICON COMPOUNDS SPECTRA SPECTROSCOPY SYNCHROTRONS ULTRAVIOLET SPECTRA |
| title | Graphene growth by molecular beam epitaxy on the carbon-face of SiC |
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