Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.01015 and 1.01015 ions/cm2 activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope...

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Bibliographische Detailangaben
Hauptverfasser:	Abo, Satoshi, Nishikawa, Kazuhisa, Ushigome, Naoya, Wakaya, Fujio, Iwamatsu, Toshiaki, Oda, Hidekazu, Takai, Mikio
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ANNEALING Arsenic ARSENIC IONS ATOMIC FORCE MICROSCOPY BORON IONS CHARGED PARTICLES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEPTH DIFFUSION DIMENSIONS DOSES ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTROMAGNETIC RADIATION ELEMENTS ENERGY RANGE HEAT TREATMENTS IMPURITIES ION IMPLANTATION ION MOBILITY IONS KEV RANGE Lamps Laser beam annealing LASER RADIATION LIGHT BULBS Low resistance MASS SPECTROSCOPY MATERIALS SCIENCE MICROSCOPES MICROSCOPY MOBILITY PARTICLE MOBILITY PHYSICAL PROPERTIES RADIATIONS RESOLUTION SEMIMETALS SILICON SPECTROSCOPY Spikes Spreading
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