Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.01015 and 1.01015 ions/cm2 activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 degree C spike lamp annealing followed by 0.35 kW/mm2 laser annealing was half of that without laser annealing. The lowest local resistance at the low resistance region in the arsenic implanted silicon activated by 1050 degree C spike lamp annealing followed by 0.39 kW/mm2 laser annealing was 74% lower than that followed by 0.36 kW/mm2 laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm2 laser annealing followed by 1050 degree C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.