Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs

We find that fast neutron irradiated n- and p-GaAs diodes both show a broad feature in deep level transient spectroscopy (DLTS) previously studied primarily in n-GaAs and termed the "U-band." The high temperature edge of the broad DLTS feature cuts off at the same temperature in both n- and p-GaAs suggesting that the cut off is due to the DLTS behavior expected for a continuous density of defect states that spans midgap. The band gap implied by the DLTS midgap cut off is 1.36 eV, as compared to the bulk GaAs band gap 1.52 eV. Band gap narrowing is consistent with previous measurements of lattice expansion in neutron irradiated GaAs. This leads to a model of defect cascades that are regions of narrowed band gap with defect levels that are inhomogeneously broadened. We observe, in addition, that the damage cascades are surrounded by large Coulomb barriers that prevent the complete filling of traps in the damaged regions.