Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF{sub 6}

Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF{sub 6} gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF{sub 6} gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions.