Two-section broadband superluminescent diodes

Two-section broadband superluminescent diodes

Superluminescent diodes (SLDs) with two electrically isolated injection areas based on a single quantum-well GaAlAs/GaAs heterostructure operating at around 825 nm are studied experimentally. It is shown that varying the currents injected through the sections allows these SLDs to produce the cw outp...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2009-05, Vol.39 (5), p.421-424
Hauptverfasser: Kostin, Yu O, Yakubovich, S D
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
BEAM CURRENTS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CURRENTS
DIODE TUBES
ELECTRON TUBES
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
QUANTUM WELLS
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Zusammenfassung:Superluminescent diodes (SLDs) with two electrically isolated injection areas based on a single quantum-well GaAlAs/GaAs heterostructure operating at around 825 nm are studied experimentally. It is shown that varying the currents injected through the sections allows these SLDs to produce the cw output power from a few to nearly a hundred milliwatts without changing the spectral bandwidth (about 70 nm). (lasers and amplifiers)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2009v039n05ABEH014002