Quantum memory for light via a stimulated off-resonant Raman process: Beyond the three-level {Lambda}-scheme approximation

We consider a quantum memory scheme based on the conversion of a signal pulse into a long-lived spin coherence via stimulated off-resonant Raman process. For a storing medium consisting of alkali-metal atoms, we have calculated the Autler-Townes resonance structure created by a strong control field....

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Veröffentlicht in:Physical review. A, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2010-09, Vol.82 (3)
Hauptverfasser: Sheremet, A. S., Gerasimov, L. V., Sokolov, I. M., Kupriyanov, D. V., Mishina, O. S., Giacobino, E., Laurat, J., Laboratoire Kastler Brossel, Universite Pierre et Marie Curie, Ecole Normale Superieure, CNRS, Case 74, 4 place Jussieu, F-75252 Paris, Cedex 05
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Sprache:eng
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Zusammenfassung:We consider a quantum memory scheme based on the conversion of a signal pulse into a long-lived spin coherence via stimulated off-resonant Raman process. For a storing medium consisting of alkali-metal atoms, we have calculated the Autler-Townes resonance structure created by a strong control field. By taking into account the upper hyperfine states of the D{sub 1} optical transition, we show important deviations from the predictions of the usual three-level {Lambda}-scheme approximation and we demonstrate an enhancement of the process for particular detunings of the control. We estimate the memory efficiency one can obtain using this configuration.
ISSN:1050-2947
1094-1622
DOI:10.1103/PHYSREVA.82.033838