Charge carrier transport in indium oxide nanocrystals

Nanocrystalline indium oxide samples with various sizes of nanocrystals are synthesized by the sol-gel method. The minimal and maximal average sizes of nanocrystals are 7–8 and 18–20 nm, respectively. An analysis of conductivity measured at dc and ac signals in a wide temperature range ( T = 50–300...

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Veröffentlicht in:Journal of experimental and theoretical physics 2010-10, Vol.111 (4), p.653-658
Hauptverfasser: Forsh, E. A., Marikutsa, A. V., Martyshov, M. N., Forsh, P. A., Rumyantseva, M. N., Gas’kov, A. M., Kashkarov, P. K.
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Sprache:eng
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Zusammenfassung:Nanocrystalline indium oxide samples with various sizes of nanocrystals are synthesized by the sol-gel method. The minimal and maximal average sizes of nanocrystals are 7–8 and 18–20 nm, respectively. An analysis of conductivity measured at dc and ac signals in a wide temperature range ( T = 50–300 K) shows that the transport of charge carriers at high temperatures takes place over the conduction band, while in the low-temperature range, the hopping mechanism with a varying jump length over localized states is observed.
ISSN:1063-7761
1090-6509
DOI:10.1134/S106377611010016X