Role of secondary electrons and metastable atoms in the electron-beam activation of argon-silane mixtures

The energy and spatial degradation of the primary beam electrons and the production of high-energy secondary electrons in ionizing collisions are analyzed by solving the Boltzmann integral equation for the electron distribution function. The effect of the primary and secondary electrons on the direct ionization of an Ar-SiH 4 mixture, the production of metastable argon atoms, and the dissociation of monosilane molecules is investigated over a wide range of the beam electron energies, argon pressures, and monosilane concentrations. The influence of metastable Ar* atoms on the dissociation of SiH 4 is studied by using the balance equation for metastable argon atoms and the equation for the ambipolar diffusion of ions and low-energy secondary (plasma) electrons in the beam plasma. It is shown that the main contribution to the activation of an Ar-SiH 4 mixture in an electron-beam plasma is provided by secondary electrons with energies higher than the excitation threshold for argon and the dissociation threshold for monosilane, whereas the contribution from metastable argon atoms, though potentially being comparable with that from secondary electrons, is less than in gas-discharge plasmas.