Anisotropic Transport of Electrons in a Novel FET Channel with Chains of InGaAs Nano-Islands Embedded along Quasi-Periodic Multi-Atomic Steps on Vicinal (111)B GaAs

We have studied electron transport in n-AlGaAs/GaAs heterojunction FET channels, in which chains of InGaAs nano-islands are embedded along quasi-periodic steps. By using two samples, conductance G{sub para}(V{sub g}) parallel to the steps and G{sub perp}(V{sub g}) perpendicular to them were measured...

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Bibliographische Detailangaben
Hauptverfasser:	Akiyama, Y., Kawazu, T., IIS, University of Tokyo, Meguro-ku, Tokyo 153-8505, Noda, T., Sakaki, H., Toyota Technological Institute, Tempaku-ku, Nagoya 468-8511
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ANISOTROPY ARSENIC COMPOUNDS ARSENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH METHODS ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTRON GAS EPITAXY FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS MATERIALS MOLECULAR BEAM EPITAXY N-TYPE CONDUCTORS NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PERIODICITY PHYSICAL PROPERTIES PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR MATERIALS TRANSISTORS VARIATIONS
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