Blue-enhanced thin-film photodiode for dual-screen x-ray imaging

This article reports on a -Si : H -based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n - and p -type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode ex...

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Veröffentlicht in:Applied physics letters 2009-12, Vol.95 (26), p.263505-263505-3
Hauptverfasser: Vygranenko, Y., Sazonov, A., Heiler, G., Tredwell, T., Vieira, M., Nathan, A.
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Sprache:eng
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Zusammenfassung:This article reports on a -Si : H -based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n - and p -type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of 900   pA / cm 2 and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored p -layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional a -Si : H n - i - p photodiode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3276288