Blue-enhanced thin-film photodiode for dual-screen x-ray imaging
This article reports on a -Si : H -based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n - and p -type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode ex...
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Veröffentlicht in: | Applied physics letters 2009-12, Vol.95 (26), p.263505-263505-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
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Zusammenfassung: | This article reports on
a
-Si
:
H
-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the
n
- and
p
-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode exhibits a dark current density of
900
pA
/
cm
2
and an external quantum efficiency up to 90% at a reverse bias of 5 V. In the case of illumination through the tailored
p
-layer, the quantum efficiency of 60% at a 400 nm wavelength is almost double that for the conventional
a
-Si
:
H
n
-
i
-
p
photodiode. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3276288 |