Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device sho...

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Veröffentlicht in:	Applied physics letters 2009-12, Vol.95 (26), p.262113-262113-3
Hauptverfasser:	Lee, Seunghyup, Kim, Heejin, Yun, Dong-Jin, Rhee, Shi-Woo, Yong, Kijung
Format:	Artikel
Sprache:	eng
Schlagworte:	ALLOYS CARBON ADDITIONS CHALCOGENIDES DEPOSITION ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTROMAGNETIC RADIATION ELEMENTS GOLD HIGH ALLOY STEELS IRON ALLOYS IRON BASE ALLOYS MATERIALS MATERIALS SCIENCE MEMORY DEVICES METALS OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES RADIATIONS RADIOWAVE RADIATION RANDOMNESS SEMICONDUCTOR MATERIALS SPUTTERING STAINLESS STEELS STEELS SUBSTRATES THIN FILMS TRANSITION ELEMENT ALLOYS TRANSITION ELEMENTS ZINC COMPOUNDS ZINC OXIDES
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Zusammenfassung:	This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.3280864