Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface...

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Veröffentlicht in:	Applied physics letters 2010-03, Vol.96 (12), p.121911-121911-3
Hauptverfasser:	Nataraj, L., Sustersic, N., Coppinger, M., Gerlein, L. F., Kolodzey, J., Cloutier, S. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHALCOGENIDES CRYSTAL GROWTH CRYSTAL GROWTH METHODS ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELEMENTS EMISSION EPITAXY GERMANIUM LUMINESCENCE MATERIALS MATERIALS SCIENCE METALS MOLECULAR BEAM EPITAXY MOLECULAR STRUCTURE OXIDES OXYGEN COMPOUNDS PHOTOCONDUCTIVITY PHOTOEMISSION PHOTOLUMINESCENCE PHOTON EMISSION PHYSICAL PROPERTIES RAMAN SPECTRA SECONDARY EMISSION SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SPECTRA SPECTROSCOPY
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