Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy
We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface...
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Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (12), p.121911-121911-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface with little intermixing between the islands and the silicon. The shape of these islands depends on the growth conditions and includes pyramid, dome, barn-shaped, and superdome islands. Most importantly, we demonstrate that these germanium-rich islands provide efficient light emission at telecommunication wavelengths on a complementary metal-oxide semiconductor-compatible platform. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3371759 |